KM616V1002B/bl, KM616V1002Bi/bli cmos sram preliminary rev 2.1 - 1 - august 1998 preliminary preliminary document title 64kx16 bit high speed static ram(3.3v operating), revolutionary pin out. operated at commercial and industrial temperature range. revision history the attached data sheets are prepared and approved by samsung electronics. samsung electronics co., ltd. reserve the right to c hange the specifications. samsung electronics will evaluate and reply to your requests and questions on the parameters of this device. if you have any ques- tions, please contact the samsung branch office near your office, call or contact headquarters. rev no. rev. 0.0 rev. 1.0 rev. 2.0 rev. 2.1 remark design target preliminary final final history initial release with design target. release to preliminary data sheet. 1. replace design target to preliminary. release to final data sheet. 2.1. delete preliminary 2.2. add capacitive load of the test environment in a.c test load 2.3. change d.c characteristics change standby and data retention current for l-ver. items previous spec. (8/10/12ns part) changed spec. (8/10/12ns part) i cc 200/190/180ma 200/195/190ma i sb 30ma 50ma items previous spec. changed spec. i sb 0.5ma 0.7ma i dr at 3.0v 0.4ma 0.5ma i dr at 2.0v 0.3ma 0.4ma draft data apr. 1st, 1997 jun. 1st, 1997 feb. 25th, 1998 aug. 4th, 1998
KM616V1002B/bl, KM616V1002Bi/bli cmos sram preliminary rev 2.1 - 2 - august 1998 preliminary preliminary pin function pin name pin function a 0 - a 15 address inputs we write enable cs chip select oe output enable lb lower-byte control(i/o 1 ~i/o 8 ) ub upper-byte control(i/o 9 ~i/o 16 ) i/o 1 ~ i/o 16 data inputs/outputs v cc power(+3.3v) v ss ground n.c no connection 64k x 16 bit high-speed cmos static ram(3.3v operating) the KM616V1002B is a 1,048,576-bit high-speed static ran- dom access memory organized as 65,536 words by 16 bits. the KM616V1002B uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. also it allows that lower and upper byte access by data byte control ( ub , lb ). the device is fabricated using samsung s advanced cmos process and designed for high-speed circuit technology. it is particularly well suited for use in high-density high-speed system applications. the KM616V1002B is packaged in a 400mil 44-pin plastic soj or tsop2 forward. general description features clk gen. i/o 1 ~i/o 8 oe ub cs pin configuration (top view) soj/ functional block diagram tsop2 r o w s e l e c t data cont. column select clk gen. pre-charge circuit memory array 256 rows 256x16 columns i/o circuit & 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 a 15 a 14 a 13 oe ub lb i/o 16 i/o 15 i/o 14 i/o 13 vss vcc i/o 12 i/o 11 i/o 10 i/o 9 n.c. a 12 a 11 a 10 a 9 n.c. a 0 a 1 a 2 a 3 a 4 cs i/o 1 i/o 2 i/o 3 i/o 4 vcc vss i/o 5 i/o 6 i/o 7 i/o 8 we a 5 a 6 a 7 a 8 n.c. i/o 9 ~i/o 16 data cont. we lb 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 KM616V1002B/bl -8/10/12 commercial temp. KM616V1002Bi/bli -8/10/12 industrial temp. ordering information ? fast access time 8,10,12ns(max.) ? low power dissipation standby (ttl) : 50 ma (max.) (cmos) : 5 ma (max.) 0.7 ma (max.) - l-ver. only operating KM616V1002B/bl - 8 : 200 ma (max.) KM616V1002B/bl - 10 : 195 ma (max.) KM616V1002B/bl - 12 : 190 ma (max.) ? single 3.3 0.3v power supply ? ttl compatible inputs and outputs ? fully static operation - no clock or refresh required ? three state outputs ? 2v minimum data retention ; l-ver. only ? center power/ground pin configuration ? data byte control : lb : i/o 1 ~ i/o 8, ub : i/o 9 ~ i/o 16 ? standard pin configuration KM616V1002Bj : 44-soj-400 KM616V1002Bt : 44-tsop2-400f a 10 a 11 a 12 a 13 a 14 a 15 a 0 a 1 a 2 a 3 a 4 a 5 a 6 a 7 a 8 a 9
KM616V1002B/bl, KM616V1002Bi/bli cmos sram preliminary rev 2.1 - 3 - august 1998 preliminary preliminary absolute maximum ratings* * stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. this is a stress r ating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this spec ification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. parameter symbol rating unit voltage on any pin relative to v ss v in , v out -0.5 to 4.6 v voltage on v cc supply relative to v ss v cc -0.5 to 4.6 v power dissipation p d 1.0 w storage temperature t stg -65 to 150 c operating temperature commercial t a 0 to 70 c industrial t a -40 to 85 c recommended dc operating conditions (t a =0 to 70 c) note: the above parameters are also guaranteed at industrial temperature range. * v il (min) = -2.0v a.c(pulse width 6ns) for i 20 ma ** v ih (max) = v cc + 2.0v a.c (pulse width 6ns) for i 20 ma parameter symbol min typ max unit supply voltage v cc 3.0 3.3 3.6 v ground v ss 0 0 0 v input high voltage v ih 2.0 - v cc +0.3** v input low voltage v il -0.3* - 0.8 v dc and operating characteristics (t a =0 to 70 c, vcc=3.3 0.3v, unless otherwise specified) note: the above parameters are also guaranteed at industrial temperature range. parameter symbol test conditions min max unit input leakage current i li v in =v ss to v cc -2 2 m a output leakage current i lo cs =v ih or oe =v ih or we =v il v out =v ss to v cc -2 2 m a operating current i cc min. cycle, 100% duty cs =v il, v in =v ih or v il, i out =0 ma 8ns - 200 ma 10ns - 195 12ns - 190 standby current i sb min. cycle, cs =v ih - 50 ma i sb1 f=0mhz, cs 3 v cc -0.2v, v in 3 v cc -0.2v or v in 0.2v normal - 5 ma l-ver. - 0.7 output low voltage level v ol i ol =8 ma - 0.4 v output high voltage level v oh i oh =-4 ma 2.4 - v capacitance* (t a =25 c, f=1.0mhz) * note : capacitance is sampled and not 100% tested. item symbol test conditions min max unit input/output capacitance c i/o v i/o =0v - 8 pf input capacitance c in v in =0v - 6 pf
KM616V1002B/bl, KM616V1002Bi/bli cmos sram preliminary rev 2.1 - 4 - august 1998 preliminary preliminary test conditions note: the above test conditions are also applied at industrial temperature range. parameter value input pulse levels 0v to 3v input rise and fall times 3ns input and output timing reference levels 1.5v output loads see below ac characteristics (t a =0 to 70 c, v cc =3.3 0.3v, unless otherwise noted.) output loads(b) d out 5pf* 319 w 353 w for t hz , t lz , t whz , t ow , t olz & t ohz +3.3v * including scope and jig capacitance read cycle note: the above parameters are also guaranteed at industrial temperature range. parameter sym- bol KM616V1002B/bl-8 KM616V1002B/bl-10 KM616V1002B/bl-12 unit min max min max min max read cycle time t rc 8 - 10 - 12 - ns address access time t aa - 8 - 10 - 12 ns chip select to output t co - 8 - 10 - 12 ns output enable to valid output t oe - 4 - 5 - 6 ns ub , lb access time t ba - 8 - 10 - 12 ns chip enable to low-z output t lz 3 - 3 - 3 - ns output enable to low-z output t olz 0 - 0 - 0 - ns ub , lb enable to low-z output t blz 0 - 0 - 0 - ns chip disable to high-z output t hz 0 4 0 5 0 6 ns output disable to high-z output t ohz 0 4 0 5 0 6 ns ub , lb disable to high-z output t bhz 0 4 0 5 0 6 ns output hold from address change t oh 3 - 3 - 3 - ns output loads(a) d out r l = 50 w z o = 50 w v l = 1.5v 30pf* * capacitive load consists of all components of the test environment.
KM616V1002B/bl, KM616V1002Bi/bli cmos sram preliminary rev 2.1 - 5 - august 1998 preliminary preliminary write cycle note: the above parameters are also guaranteed at industrial temperature range. parameter symbol KM616V1002B/bl-8 KM616V1002B/bl-10 KM616V1002B/bl-12 unit min max min max min max write cycle time t wc 8 - 10 - 12 - ns chip select to end of write t cw 6 - 7 - 8 - ns address set-up time t as 0 - 0 - 0 - ns address valid to end of write t aw 6 - 7 - 8 - ns write pulse width( oe high) t wp 6 - 7 - 8 - ns write pulse width( oe low) t wp1 8 - 10 - 12 - ns ub , lb valid to end of write t bw 6 - 7 - 8 - ns write recovery time t wr 0 - 0 - 0 - ns write to output high-z t whz 0 4 0 5 0 6 ns data to write time overlap t dw 4 - 5 - 6 - ns data hold from write time t dh 0 - 0 - 0 - ns end write to output low-z t ow 3 - 3 - 3 - ns address data out previous valid data valid data timming diagrams timing waveform of read cycle(1) (address controlled , cs = oe =v il , we =v ih , ub , lb =v il ) t aa t rc t oh timing waveform of read cycle(2) ( we =v ih ) valid data high-z t rc cs address ub , lb oe data out t hz(3,4,5) t aa t co t ba t oe t olz t lz(4,5) t oh t ohz t bhz(3,4,5) t blz(4,5) notes (read cycle) 1. we is high for read cycle. 2. all read cycle timing is referenced from the last valid address to the first transition address. 3. t hz and t ohz are defined as the time at which the outputs achieve the open circuit condition and are not referenced to v oh or v ol levels. 4. at any given temperature and voltage condition, t hz (max.) is less than t lz (min.) both for a given device and from device to device. 5. transition is measured 200mv from steady state voltage with load(b). this parameter is sampled and not 100% tested. 6. device is continuously selected with cs =v il. 7. address valid prior to coincident with cs transition low. 8. for common i/o applications, minimization or elimination of bus contention conditions is necessary during read and write cycl e.
KM616V1002B/bl, KM616V1002Bi/bli cmos sram preliminary rev 2.1 - 6 - august 1998 preliminary preliminary timing waveform of write cycle(1) ( oe =clock) address cs ub , lb we data in data out t wc t cw(3) t bw t wp(2) t as(4) t dh t dw t ohz(6) high-z high-z valid data oe t aw t wr(5) timing waveform of write cycle(2) ( oe =low fixed) address cs ub , lb we data in data out t wc t cw(3) t bw t wp1(2) t dh t dw t wr(5) t as(4) t ow t whz(6) (10) (9) high-z valid data t aw high-z
KM616V1002B/bl, KM616V1002Bi/bli cmos sram preliminary rev 2.1 - 7 - august 1998 preliminary preliminary notes (write cycle) 1. all write cycle timing is referenced from the last valid address to the first transition address. 2. a write occurs during the overlap of a low cs , we , lb and ub . a write begins at the latest transition cs going low and we going low ; a write ends at the earliest transition cs going high or we going high. t wp is measured from the beginning of write to the end of write. 3. t cw is measured from the later of cs going low to end of write. 4. t as is measured from the address valid to the beginning of write. 5. t wr is measured from the end of write to the address change. t wr applied in case a write ends as cs or we going high. 6. if oe , cs and we are in the read mode during this period, the i/o pins are in the output low-z state. inputs of opposite phase of the output must not be applied because bus contention can occur. 7. for common i/o applications, minimization or elimination of bus contention conditions is necessary during read and write cycl e. 8. if cs goes low simultaneously with we going or after we going low, the outputs remain high impedance state. 9. dout is the read data of the new address. 10. when cs is low : i/o pins are in the output state. the input signals in the opposite phase leading to the output should not be applied. address cs valid data ub , lb we data in data out timing waveform of write cycle(4) ( ub , lb controlled) t wc t cw(3) t bw t wp(2) t dh t dw t wr(5) t aw t as(4) high-z high-z(8) t blz t whz(6) high-z timing waveform of write cycle(3) ( cs =controlled) address cs t aw t dw t dh valid data we data in data out high-z high-z(8) ub , lb t cw(3) t wp(2) t as(4) t wc t wr(5) high-z high-z t lz t whz(6) t bw
KM616V1002B/bl, KM616V1002Bi/bli cmos sram preliminary rev 2.1 - 8 - august 1998 preliminary preliminary functional description * note : x means don t care . cs we oe lb ub mode i/o pin supply current i/o 1 ~i/o 8 i/o 9 ~i/o 16 h x x* x x not select high-z high-z i sb , i sb1 l h h x x output disable high-z high-z i cc l x x h h l h l l h read d out high-z i cc h l high-z d out l l d out d out l l x l h write d in high-z i cc h l high-z d in l l d in d in data retention characteristics* (t a =0 to 70 c) note: the above parameters are also guaranteed at industrial temperature range. * l-ver only. parameter symbol test condition min. typ. max. unit v cc for data retention v dr cs 3 v cc -0.2v 2.0 - 3.6 v data retention current i dr v cc =3.0v, cs 3 v cc -0.2v v in 3 v cc -0.2v or v in 0.2v - - 0.5 ma v cc =2.0v, cs 3 v cc -0.2v v in 3 v cc -0.2v or v in 0.2v - - 0.4 data retention set-up time t sdr see data retention wave form(below) 0 - - ns recovery time t rdr 5 - - ms data retention wave form cs controlled v cc 3.0v v ih v dr cs gnd data retention mode cs 3 v cc - 0.2v t sdr t rdr
KM616V1002B/bl, KM616V1002Bi/bli cmos sram preliminary rev 2.1 - 9 - august 1998 preliminary preliminary #1 44-soj-400 #44 25.58 0.12 1.125 0.005 max 28.98 1.141 max 0.148 3.76 1.19 ( ) 0.047 1.27 ( ) 0.050 0.95 ( ) 0.0375 + 0.10 0.43 - 0.05 + 0.004 0.017 - 0.002 + 0.10 0.71 - 0.05 + 0.004 0.028 - 0.002 1.27 0.050 1 0 . 1 6 0 . 4 0 0 + 0.10 0.20 - 0.05 + 0.004 0.008 - 0.002 9.40 0.25 0.370 0.010 min 0.69 0.027 #22 #23 0.004 0.10 max 11.18 0.12 0.440 0.005 44-tsop2-400f 0.002 #1 0.05 #22 #44 #23 0.35 0.10 0.014 0.004 0.80 0.0315 min. 0.047 1.20 max. 0.741 18.81 max. 18.41 0.10 0.725 0.004 11.76 0.20 0.463 0.008 + 0 . 1 0 - 0 . 0 5 0.50 + 0 . 0 0 4 - 0 . 0 0 2 0 . 1 5 0 . 0 0 6 0.020 1 0 . 1 6 0 . 4 0 0 0.10 0.004 0~8 0.45 ~0.75 0.018 ~ 0.030 0.25 ( ) 0.010 ( ) 0.805 0.032 ( ) max 1.00 0.10 0.039 0.004 package dimensions units:millimeters/inches units:millimeters/inches
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